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HiPerFET TM
IXFH 7 N80 V DSS
= 800 V
Power MOSFETs
IXFM 7 N80 I D (cont) = 7 A
R DS(on) = 1.4 W
N-Channel Enhancement Mode
High dv/dt, Low t rr , HDMOS TM Family
t rr
= 250 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
800
800
V
V
V GS
V GSM
I D25
I DM
I AR
E AR
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
± 20
± 30
7
28
7
18
V
V
A
A
A
mJ
TO-204 AA (IXFM)
(TAB)
dv/dt
P D
T J
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
5
180
-55 ... +150
V/ns
W
° C
G = Gate,
S = Source,
G
D
D = Drain,
TAB = Drain
T JM
150
° C
T stg
T L
1.6 mm (0.062 in.) from case for 10 s
-55 ... +150
300
° C
° C
Features
? International standard packages
? Low R DS (on) HDMOS TM process
M d
Weight
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance
- easy to drive and to protect
? Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
? DC-DC converters
? Synchronous rectification
? Battery chargers
? Switched-mode and resonant-mode
V DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 3 mA
V DS = V GS , I D = 2.5 mA
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
800
2
4.5
± 100
250
1
V
V
nA
m A
mA
power supplies
? DC choppers
? AC motor control
? Temperature and lighting controls
? Low voltage relays
Advantages
? Easy to mount with 1 screw (TO-247)
R DS(on)
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
1.4
W
(isolated mounting screw hole)
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
91527F(7/97)
1-4
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